The electrical properties of a Single Hole Field Effect Transistor (SH-FET) based on CMOS technology are analyzed in a cryogenic environment. Few electron–hole Coulomb diamonds are observed using quantum transport spectroscopy measurements, down to the limit of single hole transport. Controlling the hole filling of the SH-FET is made possible by biasing the top gate, while the bulk contact is employed as a back gate that tunes the hole state coupling with the contacts and their distance from the interface. We compare the cryogenic Coulomb blockade regime with the room temperature regime, where the device operation is similar to that of a standard p-MOSFET.
Original languageEnglish
Pages (from-to)014001-1-014001-4
Number of pages4
JournalApplied Physics Express
Publication statusPublished - 11 Dec 2015

ID: 3616206