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@article{1b2c0de2285943ff9d5d214c2b082911,
title = "Understanding the thickness-dependent effective lifetime of crystalline silicon passivated with a thin layer of intrinsic hydrogenated amorphous silicon using a nanometer-accurate wet-etching method",
abstract = "This work studies the dependency of the effective lifetime on the a-Si:H layer thickness of c-Si substrates passivated with intrinsic a-Si:H. This is experimentally investigated by using a soft wet-etching method that enables accurate control of the a-Si:H layer thickness. In this way, variations in the effective lifetime down to thicknesses of a few nanometers are studied, while excluding effects originating from the deposition conditions of a-Si:H when samples of different thicknesses are fabricated. For thin passivation layers, results show a strong thickness dependency of the effective lifetime, which is mainly influenced by the recombination at the external a-Si:H surfaces. For thicker passivation layers, the effective lifetime is predominantly determined by the bulk a-Si:H and/or c-Si defect density. During the etching of the a-Si:H passivation layers, a gradient in the Cody gap for our samples is observed. This gradient is accompanied by a stronger decrease in the effective lifetime and is attributed to a decrease in the a-Si:H band gap and valence band offset. The observed changes in lifetime with a-Si:H layer thickness are supported with AFORS-HET simulations. When a gradient in the a-Si:H passivation layer band gap is used, simulations can reproduce the experimental results.",
author = "Dimitris Deligiannis and Vasileios Marioleas and Ravi Vasudevan and Cassan Visser and {van Swaaij}, Rene and Miro Zeman",
year = "2016",
month = "6",
doi = "10.1063/1.4954069",
language = "English",
volume = "119",
pages = "119--126",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AIP Publishing",
number = "23",

}

RIS

TY - JOUR

T1 - Understanding the thickness-dependent effective lifetime of crystalline silicon passivated with a thin layer of intrinsic hydrogenated amorphous silicon using a nanometer-accurate wet-etching method

AU - Deligiannis, Dimitris

AU - Marioleas, Vasileios

AU - Vasudevan, Ravi

AU - Visser, Cassan

AU - van Swaaij, Rene

AU - Zeman, Miro

PY - 2016/6

Y1 - 2016/6

N2 - This work studies the dependency of the effective lifetime on the a-Si:H layer thickness of c-Si substrates passivated with intrinsic a-Si:H. This is experimentally investigated by using a soft wet-etching method that enables accurate control of the a-Si:H layer thickness. In this way, variations in the effective lifetime down to thicknesses of a few nanometers are studied, while excluding effects originating from the deposition conditions of a-Si:H when samples of different thicknesses are fabricated. For thin passivation layers, results show a strong thickness dependency of the effective lifetime, which is mainly influenced by the recombination at the external a-Si:H surfaces. For thicker passivation layers, the effective lifetime is predominantly determined by the bulk a-Si:H and/or c-Si defect density. During the etching of the a-Si:H passivation layers, a gradient in the Cody gap for our samples is observed. This gradient is accompanied by a stronger decrease in the effective lifetime and is attributed to a decrease in the a-Si:H band gap and valence band offset. The observed changes in lifetime with a-Si:H layer thickness are supported with AFORS-HET simulations. When a gradient in the a-Si:H passivation layer band gap is used, simulations can reproduce the experimental results.

AB - This work studies the dependency of the effective lifetime on the a-Si:H layer thickness of c-Si substrates passivated with intrinsic a-Si:H. This is experimentally investigated by using a soft wet-etching method that enables accurate control of the a-Si:H layer thickness. In this way, variations in the effective lifetime down to thicknesses of a few nanometers are studied, while excluding effects originating from the deposition conditions of a-Si:H when samples of different thicknesses are fabricated. For thin passivation layers, results show a strong thickness dependency of the effective lifetime, which is mainly influenced by the recombination at the external a-Si:H surfaces. For thicker passivation layers, the effective lifetime is predominantly determined by the bulk a-Si:H and/or c-Si defect density. During the etching of the a-Si:H passivation layers, a gradient in the Cody gap for our samples is observed. This gradient is accompanied by a stronger decrease in the effective lifetime and is attributed to a decrease in the a-Si:H band gap and valence band offset. The observed changes in lifetime with a-Si:H layer thickness are supported with AFORS-HET simulations. When a gradient in the a-Si:H passivation layer band gap is used, simulations can reproduce the experimental results.

U2 - 10.1063/1.4954069

DO - 10.1063/1.4954069

M3 - Article

VL - 119

SP - 119

EP - 126

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 23

M1 - 235307

ER -

ID: 12555687