• 08346611

    Final published version, 1.52 MB, PDF document


A novel, simple, low-cost method for the void-free filling of high aspect ratio (HAR) through-silicon-vias (TSVs) is presented. For the first-time pure indium, a type-I superconductor metal, is used to fill HAR vias, 300 to 500 μm in depth and 50 to 100 μm in diameter. The low electrical resistivity achieved without sintering, its reproducibility and straightforward processing steps, and the short time required to fill large arrays of vias at wafer scale - all make this method one of the simplest and quickest options for filling HAR TSVs for MEMS 3D integration. Moreover, the low melting point (∼ 150 °C), malleability and superconductivity at 3.41 K make indium an interesting option in 3D interconnects for connecting quantum devices operating below 4 K.

Original languageEnglish
Title of host publication31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018)
Subtitle of host publicationBelfast, Northern Ireland
Place of PublicationPiscataway, NJ
Number of pages4
ISBN (Electronic)978-1-5386-4782-0
Publication statusPublished - 2018
EventMEMS 2018: 31st IEEE International Conference on Micro Electro Mechanical Systems - Belfast, United Kingdom
Duration: 21 Jan 201825 Jan 2018


ConferenceMEMS 2018
CountryUnited Kingdom
Internet address

    Research areas

  • Through-silicon vias, Filling, Surface treatment, Blades, Superconductivity, Indium

ID: 45357125