Varying characteristics of bipolar transistors with emitter contact window width

J Fu, S Mijalkovic, WJ Eysenga, HW van Zeijl, W Crans

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	SISPAD'01: proceedings
Place of Publication	Wien-NewYork
Publisher	Springer
Pages	1-4
Number of pages	4
ISBN (Print)	3-211-83708-6
Publication status	Published - 2001
Event	Simulation of Semiconductor Processes and Devices, S.l. - Wien-NewYork Duration: 5 Sept 2001 → 7 Sept 2001

Name
Publisher	Springer-Verlag

Conference	Simulation of Semiconductor Processes and Devices, S.l.
Period	5/09/01 → 7/09/01

Keywords

@inproceedings{42e0fce7548446a19cdd0ddacc77daed,

title = "Varying characteristics of bipolar transistors with emitter contact window width",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "J Fu and S Mijalkovic and WJ Eysenga and {van Zeijl}, HW and W Crans",

year = "2001",

language = "Undefined/Unknown",

isbn = "3-211-83708-6",

publisher = "Springer",

pages = "1--4",

booktitle = "SISPAD'01: proceedings",

note = "Simulation of Semiconductor Processes and Devices, S.l. ; Conference date: 05-09-2001 Through 07-09-2001",

}

TY - GEN

T1 - Varying characteristics of bipolar transistors with emitter contact window width

AU - Fu, J

AU - Mijalkovic, S

AU - Eysenga, WJ

AU - van Zeijl, HW

AU - Crans, W

PY - 2001

Y1 - 2001

KW - ZX Int.klas.verslagjaar < 2002

M3 - Conference contribution

SN - 3-211-83708-6

SP - 1

EP - 4

BT - SISPAD'01: proceedings

PB - Springer

CY - Wien-NewYork

T2 - Simulation of Semiconductor Processes and Devices, S.l.

Y2 - 5 September 2001 through 7 September 2001

ER -