This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.

Original languageEnglish
Title of host publicationESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781728115504
Publication statusPublished - 1 Sep 2019
Event45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 - Cracow, Poland
Duration: 23 Sep 201926 Sep 2019


Conference45th IEEE European Solid State Circuits Conference, ESSCIRC 2019

ID: 67542696