Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

J. Van Staveren; C. Garcia Almudever; G. Scappucci; M. Veldhorst; M. Babaie; E. Charbon; F. Sebastiano

doi:10.1109/ESSCIRC.2019.8902861

Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

J. Van Staveren, C. Garcia Almudever, G. Scappucci, M. Veldhorst, M. Babaie, E. Charbon, F. Sebastiano

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

17 Citations (Scopus)

Abstract

This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.

Original language	English
Title of host publication	ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	37-40
Number of pages	4
ISBN (Electronic)	9781728115504
DOIs	https://doi.org/10.1109/ESSCIRC.2019.8902861
Publication status	Published - 1 Sept 2019
Event	45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 - Cracow, Poland Duration: 23 Sept 2019 → 26 Sept 2019

Publication series

Name	ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference

Conference

Conference	45th IEEE European Solid State Circuits Conference, ESSCIRC 2019
Country/Territory	Poland
City	Cracow
Period	23/09/19 → 26/09/19

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10.1109/ESSCIRC.2019.8902861

Cite this

Van Staveren, J., Garcia Almudever, C., Scappucci, G., Veldhorst, M., Babaie, M., Charbon, E., & Sebastiano, F. (2019). Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS. In ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (pp. 37-40). Article 8902861 (ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ESSCIRC.2019.8902861

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title = "Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS",

abstract = "This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.",

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Van Staveren, J, Garcia Almudever, C, Scappucci, G , Veldhorst, M , Babaie, M , Charbon, E & Sebastiano, F 2019, Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS. in ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference., 8902861, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference, Institute of Electrical and Electronics Engineers (IEEE), pp. 37-40, 45th IEEE European Solid State Circuits Conference, ESSCIRC 2019, Cracow, Poland, 23/09/19. https://doi.org/10.1109/ESSCIRC.2019.8902861

Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS. / Van Staveren, J.; Garcia Almudever, C.; Scappucci, G. et al.
ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), 2019. p. 37-40 8902861 (ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AB - This paper presents a family of voltage references in standard 40-nm CMOS that exploits the temperature dependence of dynamic-threshold MOS,NMOS and PMOS transistors in weak inversion to enable operation over the ultra-wide temperature range from 4.2 K to 300 K. The proposed references achieve a temperature drift below 436 ppm/K over a statistically significant number of samples after a single-point trim and a supply regulation better than 1.7 %/V from a a supply as low as 0.99 V. These results demonstrate,for the first time,the generation of PVT-independent voltages over an ultra-wide temperature range using sub-1-V nanometer CMOS circuits,thus enabling the use of the proposed references in harsh environments,such as in space and quantum-computing applications.

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Van Staveren J, Garcia Almudever C, Scappucci G , Veldhorst M , Babaie M , Charbon E et al. Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS. In ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE). 2019. p. 37-40. 8902861. (ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference). doi: 10.1109/ESSCIRC.2019.8902861

Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

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