TY - JOUR
T1 - Wafer-scale transfer-free process of multi-layered graphene grown by chemical vapor deposition
AU - Ricciardella, Filiberto
AU - Vollebregt, Sten
AU - Boshuizen, Bart
AU - Danzl, F.J.K.
AU - Cesar, Ilkay
AU - Spinelli, Pierpaolo
AU - Sarro, Pasqualina Maria
PY - 2020
Y1 - 2020
N2 - Chemical vapour deposition (CVD) has emerged as the dominant technique to combine high quality with large scale production of graphene. The key challenge for CVD graphene remains the transfer of the film from the growth substrate to the target substrate while preserving the quality of the material. Avoiding the transfer process of single or multi-layered graphene (SLG-MLG) has recently garnered much more interest. Here we report an original method to obtain a 4-inch wafer fully covered by MLG without any transfer step from the growth substrate. We prove that the MLG is completely released on the oxidized silicon wafer. A hydrogen peroxide solution is used to etch the molybdenum layer, used as a catalyst for the MLG growth via CVD. X-ray photoelectron spectroscopy proves that the layer of Mo is etched away and no residues of Mo are trapped beneath MLG. Terahertz transmission near-field imaging as well as Raman spectroscopy and atomic force microscopy show the homogeneity of the MLG film on the entire wafer after the Mo layer etch. These results mark a significant step forward for numerous applications of SLG-MLG on wafer scale, ranging from micro/nano-fabrication to solar cells technology.
AB - Chemical vapour deposition (CVD) has emerged as the dominant technique to combine high quality with large scale production of graphene. The key challenge for CVD graphene remains the transfer of the film from the growth substrate to the target substrate while preserving the quality of the material. Avoiding the transfer process of single or multi-layered graphene (SLG-MLG) has recently garnered much more interest. Here we report an original method to obtain a 4-inch wafer fully covered by MLG without any transfer step from the growth substrate. We prove that the MLG is completely released on the oxidized silicon wafer. A hydrogen peroxide solution is used to etch the molybdenum layer, used as a catalyst for the MLG growth via CVD. X-ray photoelectron spectroscopy proves that the layer of Mo is etched away and no residues of Mo are trapped beneath MLG. Terahertz transmission near-field imaging as well as Raman spectroscopy and atomic force microscopy show the homogeneity of the MLG film on the entire wafer after the Mo layer etch. These results mark a significant step forward for numerous applications of SLG-MLG on wafer scale, ranging from micro/nano-fabrication to solar cells technology.
KW - chemical vapor deposition
KW - large-area synthesis
KW - multi-layered graphene
KW - polymer-free transfer medium
KW - transfer-free process
UR - http://www.scopus.com/inward/record.url?scp=85082294019&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/ab771e
DO - 10.1088/2053-1591/ab771e
M3 - Article
AN - SCOPUS:85082294019
SN - 2053-1591
VL - 7
SP - 1
EP - 8
JO - Materials Research Express
JF - Materials Research Express
IS - 3
M1 - 035001
ER -