Abstract
The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the antenna-detector impedance mismatch, the detector shows an average NEP of 2.71 pW/√Hz such that, together with the antenna, the radiometer promises fully passive and uncooled imaging capabilities with 2.6 K temperature sensitivity at a 10 Hz refresh rate. The design is planned for fabrication and measurement.
Original language | English |
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Title of host publication | 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 |
Place of Publication | Danvers, MA |
Publisher | IEEE |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 978-1-5090-6050-4 |
ISBN (Print) | 978-1-5090-6048-1 |
DOIs | |
Publication status | Published - 2017 |
Event | 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico Duration: 27 Aug 2017 → 1 Sept 2017 |
Conference
Conference | 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 |
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Country/Territory | Mexico |
City | Cancun, Quintana Roo |
Period | 27/08/17 → 1/09/17 |
Bibliographical note
Accepted Author ManuscriptKeywords
- CMOS integrated circuits
- broadband antennas
- millimetre wave antennas
- p-n junctions
- radiometers
- semiconductor diodes
- submillimetre wave antennas
- submillimetre wave detectors
- CMOS technology
- antenna-detector impedance mismatch
- frequency 10.0 Hz
- frequency 200.0 GHz to 600.0 GHz
- passive uncooled radiometer pixel
- pn-junction diode
- size 28.0 nm
- temperature 2.6 K
- uncooled imaging capabilities
- wideband antenna
- wideband single pixel radiometer
- Antennas
- Detectors
- Imaging
- Lenses
- Radiometry
- Schottky diodes
- Silicon